Valence-bond dynamical mean-field theory of doped Mott insulators: Pseudogap and Fermi arcs formation as an orbital-selective Mott transition

Valence-bond dynamical mean-field theory of doped Mott insulators: Pseudogap and Fermi arcs formation as an orbital-selective Mott transition

In this talk, I will introduce a valence-bond dynamical mean-field theory of doped Mott insulators. It is based on a minimal cluster of two orbitals, each associated with a different region of momentum space and hybridized to a self-consistent bath. The low-doping regime is characterized by singlet formation and the suppression of quasiparticles in the antinodal regions, leading to the formation of Fermi arcs. I will show that this is described by an orbital-selective transition in momentum space. I will also present calculations for the tunneling and photoemission spectra that are consistent with the phenomenology of the normal state of cuprate superconductors.

IPhT

The event is finished.

Date

16 March 2009
Expired!

Time

14h15 – 0h00

Location

Salle Claude Itzykson, Bât. 774
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